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DALC208SC6Y 数据表(PDF) 3 Page - STMicroelectronics |
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DALC208SC6Y 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 12 page ![]() DALC208SC6Y Characteristics Doc ID 16362 Rev 1 3/12 Figure 3. Input capacitance measurement Figure 6. Input capacitance versus reverse applied voltage (typical values) Table 3. Electrical characteristics - values (Tamb = 25 °C) Symbol Parameter Conditions Typ. Max. Unit VF Forward voltage IF = 50 mA 1.2 V IR Reverse leakage current per diode VR = 5 V 1 µA C Input capacitance between Line and GND See Figure 3. 7 10 pF G REF1 I/O +V CC REF1 connected to GND REF2 connected to +Vcc Input applied : Vcc = 5 V, Vsign = 30 mV, F = 1 MHz REF2 VR Figure 4. Reverse clamping voltage versus peak pulse current (Tj initial = 25 °C), typical values Figure 5. Variation of leakage current versus junction temperature (typical values) 5 1015202530 0.1 1.0 2.0 V (V) CL I (A) pp tp=2.5µs rectangular waveform I/O vs REF1 or REF2 25 50 75 100 125 150 0.01 0.1 1 10 100 T (°C) j IR(µA) 0 1 23 45 5.0 5.5 6.0 6.5 7.0 7.5 8.0 V (V) R C(pF) F=1MHz Vsign=30mV Vref1/ref2=5V |
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