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L6699D 数据表(PDF) 10 Page - STMicroelectronics |
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L6699D 数据表(HTML) 10 Page - STMicroelectronics |
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10 / 38 page ![]() Electrical data L6699 10/38 Doc ID 022835 Rev 2 TD (2) Deadtime self-adjustment range Minimum value 0.23 µs Maximum value 0.7 VCFp Peak value 3.9 V VCFv Valley value 0.9 V VREF Voltage reference on pin 4 (1) 1.93 2 2.07 V IREF = -2 mA (1) 1.8 2 2.07 KM Current mirroring ratio 1 A/A RFmin Timing resistor range 1 100 k Ω Zero-current comparator VZCD neg Threshold voltage (-) -10 mV VZCD pos Threshold voltage (+) +10 mV Pfc_stop function Ileak High level leakage current VPFC_STOP = VCC, VDIS = 0 V 1 µA RPFC_STOP ON-state resistance IPFC_STOP = 1 mA, VDIS > 1.92 V 130 200 Ω Soft-start function Ileak Open-state current V(CSS) = 2 V 0.5 µA R Discharge resistance 120 Ω TDISCH CSS discharge duration VISEN > VISENx or approaching capacitive-mode 5 µs Capacitive-mode detected 50 Standby function ISTBY Input bias current VSTBY = 0 to 1.3 V -1 µA VSTBY Disable threshold Voltage falling (1) 1.22 1.26 1.3 V Hys Hysteresis Voltage rising 30 mV Delayed shutdown function Ileak Open-state current VDELAY = 1 V 1 µA VDELAY = 1 V, after shutdown -0.1 -0.5 ICHARGE Charge current VDELAY = 2.5 V, VISEN = 0.85 V 250 350 450 µA Vth1 Threshold for forced operation at max. frequency Voltage rising (1) 1.92 2.0 2.08 V Vth2 Shutdown threshold Voltage rising (1) 3.35 3.5 3.65 V Vth3 Restart threshold Voltage falling (1) 0.27 0.3 0.33 V Low-side gate driver (voltages referred to GND) VLVGL Output low voltage Isink = 200 mA 1.5 V VLVGH Output high voltage Isource = 5 mA 12.8 13.3 V Table 5. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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