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STL66DN3LLH5 数据表(PDF) 1 Page - STMicroelectronics |
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STL66DN3LLH5 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() This is information on a product in full production. March 2012 Doc ID 022353 Rev 2 1/15 15 STL66DN3LLH5 Dual N-channel 30 V, 5.9 m Ω, 20 A STripFET™ V Power MOSFET in PowerFLAT™ 5x6 double island package Datasheet — production data Features ■ Logic level VGS(th) ■ 175 °C junction temperature Applications ■ Switching applications ■ Automotive Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID STL66DN3LLH5 30 V < 6.5 m Ω 20 A (1) 1. The value is rated according Rthj-pcb PowerFLAT™ 5x6 double island 1 2 3 4 Top view Table 1. Device summary Order code Marking Package Packaging STL66DN3LLH5 66DN3LLH5 PowerFLAT™ 5x6 double island Tape and reel www.st.com |
类似零件编号 - STL66DN3LLH5 |
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类似说明 - STL66DN3LLH5 |
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