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STL66DN3LLH5 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL66DN3LLH5
功能描述  Dual N-channel 30 V, 5.9 mΩ, 20 A STripFET™ V Power MOSFET in PowerFLAT™ 5x6 double island package
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL66DN3LLH5 数据表(HTML) 3 Page - STMicroelectronics

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STL66DN3LLH5
Electrical ratings
Doc ID 022353 Rev 2
3/15
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
30
V
VGS
Gate-source voltage
± 22
V
ID
(1)
1.
Specified by design. Not subject to production test.
Drain current (continuous) at TC = 25 °C
78.5
A
ID
(1)
Drain current (continuous) at TC = 100 °C
55.5
A
ID
Drain current (continuous) at Tpcb = 25 °C
20
A
ID
Drain current (continuous) at Tpcb=100 °C
14.2
A
IDM
(2),(3)
2.
Pulse width limited by safe operating area
3.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Drain current (pulsed)
80
A
PTOT
Total dissipation at TC = 25°C
72
W
PTOT
Total dissipation at Tpcb = 25°C
4.7
W
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
2.08
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
Thermal resistance junction-pcb
32
°C/W
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAV
Not-repetitive avalanche current,
(pulse width limited by TJ max)
18.5
A
EAS
(1)
1. Per channel.
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAV , VDD = 24 V)
270
mJ



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