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STL66DN3LLH5 数据表(PDF) 3 Page - STMicroelectronics |
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STL66DN3LLH5 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STL66DN3LLH5 Electrical ratings Doc ID 022353 Rev 2 3/15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 30 V VGS Gate-source voltage ± 22 V ID (1) 1. Specified by design. Not subject to production test. Drain current (continuous) at TC = 25 °C 78.5 A ID (1) Drain current (continuous) at TC = 100 °C 55.5 A ID Drain current (continuous) at Tpcb = 25 °C 20 A ID Drain current (continuous) at Tpcb=100 °C 14.2 A IDM (2),(3) 2. Pulse width limited by safe operating area 3. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Drain current (pulsed) 80 A PTOT Total dissipation at TC = 25°C 72 W PTOT Total dissipation at Tpcb = 25°C 4.7 W TJ Tstg Operating junction temperature Storage temperature -55 to 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 2.08 °C/W Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Thermal resistance junction-pcb 32 °C/W Table 4. Avalanche data Symbol Parameter Value Unit IAV Not-repetitive avalanche current, (pulse width limited by TJ max) 18.5 A EAS (1) 1. Per channel. Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 24 V) 270 mJ |
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