STL66DN3LLH5 datasheet(4/15 Pages) STMICROELECTRONICS

部件名	STL66DN3LLH5

功能描述	Dual N-channel 30 V, 5.9 mΩ, 20 A STripFET™ V Power MOSFET in PowerFLAT™ 5x6 double island package

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 15 page

Electrical characteristics

STL66DN3LLH5

4/15

Doc ID 022353 Rev 2

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V,

VDS = 30 V, TC=125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 22 V

µA

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 10 A

VGS= 4.5 V, ID= 10 A

5.9

7.1

6.5

7.9

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

1500

230

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 19 A

VGS =4.5 V

(see Figure 14)

4.4

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD=15 V, ID= 9.5 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

8.8

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