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STL40N10F7 数据表(PDF) 1 Page - STMicroelectronics |
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STL40N10F7 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 15 page ![]() December 2015 DocID024671 Rev 3 1/15 This is information on a product in full production. www.st.com STL40N10F7 N- channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STL40N10F7 100 V 0.024Ω 10 A 5 W Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code Marking Package Packing STL40N10F7 40N10F7 PowerFLAT TM 5x6 Tape and reel |
类似零件编号 - STL40N10F7 |
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类似说明 - STL40N10F7 |
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