STL40N10F7 datasheet(5/15 Pages) STMICROELECTRONICS

部件名	STL40N10F7

功能描述	Among the lowest RDS on the market

PDF	15 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

5 / 15 page

STL40N10F7

Electrical characteristics

DocID024671 Rev 3

5/15

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain curren

ISD = 32 A, VGS = 0 V

ISDM

(1)

Source-drain current (pulsed)

128

VSD

(2)

Forward on voltage

1.1

trr

Reverse recovery time

ISD = 32 A, di/dt = 100 A/µs

VDD = 80 V. TJ = 150° C

Qrr

Reverse recovery charge

IRRM

Reverse recovery current

2.3

Notes:

(1)

Pulse width limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

2.1

Electrical characteristics (curves)

Figure 2: Safe operating area

Figure 3: Thermal impedance

Figure 4: Output characteristics

Figure 5: Transfer characteristics

0.1

VDS(V)

(A)

ion

Lim

ite

(on

)

10ms

100ms

0.01

Tj=175°C

Tpcb=25°C

Single pulse

GIPG270320141147SA

0.05

0.02

0.01

0.1

0.2

GIPG270320141356S A

STL40N10F7 数据表(PDF) 5 Page - STMicroelectronics

STL40N10F7 数据表(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

数据表下载