STL40N10F7 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL40N10F7

4/15

DocID024671 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On/Off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 μA, VGS = 0 V

100

IDSS

Zero gate voltage

drain current

VGS = 0

VDS = 100 V

µA

VGS = 0 , VDS = 100 V, TC =

125° C

100

μA

IGSS

Gate-body leakage

current

VDS = 0, VGS= +20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS , ID = 250 μA

4.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID= 10 A

0.02

0.024

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0 V

1270

Coss

Output capacitance

290

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 50 V, ID = 32 A,

VGS = 10 V (see Figure 14: "Test

circuit for gate charge behavior")

119

Qgs

Gate-source charge

Qgd

Gate-drain charge

4.5

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VDD = 50 V, ID = 16 A,

RG = 4.7 Ω, VGS = 10 V (see Figure 13:

"Test circuit for resistive load switching

times")

Rise time

17.5

td(off)

Turn-off delay

time

Fall time

5.6

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