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STM32F401CB 数据表(PDF) 69 Page - STMicroelectronics |
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STM32F401CB 数据表(HTML) 69 Page - STMicroelectronics |
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69 / 134 page  DocID024738 Rev 5 69/134 STM32F401xB STM32F401xC Electrical characteristics 113 Figure 21. Typical VBAT current consumption (LSE and RTC ON) Table 30. Typical and maximum current consumption in Standby mode - VDD=3.3 V Symbol Parameter Conditions Typ(1) Max(2) Unit TA = 25 °C TA = 25 °C TA = 85 °C TA = 105 °C IDD_STBY Supply current in Standby mode Low-speed oscillator (LSE) and RTC ON 2.8 5.0 14.0 28.0 µA RTC and LSE OFF 2.1 4.0(3) 13.0 27.0(3) 1. When the PDR is OFF (internal reset is OFF), the typical current consumption is reduced by 1.2 µA. 2. Guaranteed by characterization, unless otherwise specified. 3. Guaranteed by test in production. Table 31. Typical and maximum current consumptions in VBAT mode Symbol Parameter Conditions(1) Typ Max(2) Unit TA = 25 °C TA = 85 °C TA = 105 °C VBAT = 1.7 V VBAT= 2.4 V VBAT = 3.3 V VBAT = 3.6 V IDD_VBAT Backup domain supply current Low-speed oscillator (LSE) and RTC ON 0.66 0.76 0.97 3.0 5.0 µA RTC and LSE OFF 0.1 0.1 0.1 2.0 4.0 1. Crystal used: Abracon ABS07-120-32.768 kHz-T with a CL of 6 pF for typical values. 2. Guaranteed by characterization. |
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