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STM32F401CB 数据表(PDF) 83 Page - STMicroelectronics |
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STM32F401CB 数据表(HTML) 83 Page - STMicroelectronics |
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83 / 134 page  DocID024738 Rev 5 83/134 STM32F401xB STM32F401xC Electrical characteristics 113 Figure 28 and Figure 29 show the main PLL output clock waveforms in center spread and down spread modes, where: F0 is fPLL_OUT nominal. Tmode is the modulation period. md is the modulation depth. Figure 28. PLL output clock waveforms in center spread mode Figure 29. PLL output clock waveforms in down spread mode 6.3.12 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. The devices are shipped to customers with the Flash memory erased. Table 44. Flash memory characteristics Symbol Parameter Conditions Min Typ Max Unit IDD Supply current Write / Erase 8-bit mode, VDD = 1.7 V - 5 - mA Write / Erase 16-bit mode, VDD = 2.1 V - 8 - Write / Erase 32-bit mode, VDD = 3.3 V - 12 - |
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