SPT01-335DEE datasheet(3/16 Pages) STMICROELECTRONICS

3 / 16 page

DocID15200 Rev3

3/16

SPT01-335DEE

Characteristics

Table 1. Pinout connections (see Figure 2)

Pin #

Name

Description

Exposed pad aligned with pins 1 and 6

D1 Power bus protection diode cathode

1, 6

D1 Power bus protection diode anode

5, Exposed pad aligned with pins 2

and 5

V+

D2 sensor switch protection diode cathode;

pin 5 internally connected to mid pad

V-

D2 sensor switch protection diode anode

Exposed pad aligned with pins 3 and 4

D3 reverse blocking protection diode cathode

3, 4

D3 reverse blocking protection diode anode

Table 2. Absolute ratings (Tamb = 25 °C)

Symbol Diode

Parameter

Value

Unit

VPP

All

ESD protection, IEC 61000-4-2, per diode, in air (1)

1. See system oriented test circuits in Figure 11 (ESD) and Figure 10 (Surge as also described

IEC 60947-5-2).

ESD protection, IEC 61000-4-2, per diode, in contact (1)

8kV

VPP

All

Peak Surge Voltage, IEC 61000-4-5, per diode,

RCC = 500 Ω,

(1)

1kV

IPP

All

Peak pulse forward and reverse current, tp = 8/20 µs

PPP

All

Peak pulse power dissipation, TJ = Tamb = 100 °C, tP = 8/20 µs

100

IFSM

All

Maximum forward surge current, tP = 10 ms square

EAR

Maximum repetitive avalanche energy

L = 1 H, IRAS = 0.3 A, RS = 100 Ω, VCC = 30 V,Tamb = 85 °C

(1)

All

Storage junction temperature range

- 40 to 175

°C

Table 3. Recommended operating conditions

Symbol

Parameter

Value

Unit

VCC

Operating power bus supply voltage

-30 to 36

Pulse repetitive voltage tP = 0.5 s, RCC = 500 Ω

-30 to 35

D3 forward peak current Tj = 150 °C duty cycle = 50%

300

Tamb

Operating ambient temperature range

-40 to 100

°C

Operating junction temperature range(1)

1. Extended from DC operating at 150 °C up to peak repetitive value during the inductive load

demagnetization

-40 to 175

°C

SPT01-335DEE 数据表(PDF) 3 Page - STMicroelectronics

SPT01-335DEE 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

数据表下载