SPT01-335DEE datasheet(4/16 Pages) STMICROELECTRONICS

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Characteristics

SPT01-335DEE

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DocID15200 Rev3

Table 4. Electrical characteristics (TJ = 25 °C, unless otherwise specified)

Symbol

Diode

Name

Test conditions

Value

Unit

VRM

All

Reverse stand off voltage(1)

1. Reverse stand-off voltage is valid for ambient temperature within the operating temperature

range.

IR = 0.2 µA

Min

IR = 1 µA

Min

IRM

All

Leakage reverse current

VRM = 33 V

Max

0.2

µA

VRM = 33 V,

TJ = 150 °C

Max

µA

VBR

All

Reverse breakdown voltage

IR = 1 mA

Min

Typ

41.4

VCL

All

Peak clamping voltage

IPP = 2 A,

tP = 8 /20 µs

Max

Typ

All

8/20µs dynamic resistance

Typ

0.5

αTAll

VBR Temperature sensitivity

Max

10-4 /°C

VCL

Peak clamping voltage

IR = 0.3 A, L = 1 H,

tP = 8 /20 µs,

VCC = 30 V

Max

Forward drop voltage

IF = 300 mA

Max

Table 5. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-a)

SMD thermal resistance junction to ambient, per diode

FR4 board, copper thickness = 35 µm, SCu = 0.85 mm²

330

°C/W

Zth(j-a)

SMD thermal transient impedance junction to ambient, per diode

tp = 15 ms, Tamb = 85 °C, SCu = 0.85 mm²

°C/W

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