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SPT01-335DEE 数据表(PDF) 5 Page - STMicroelectronics |
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SPT01-335DEE 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() DocID15200 Rev3 5/16 SPT01-335DEE Characteristics Figure 7. Relative variation of thermal impedance junction to ambient versus pulse duration (printed circuit board) Figure 3. Relative variation of peak pulse power versus initial junction temperature Figure 4. Peak pulse power versus exponential pulse duration (typical values) P PP[Tj initial] / PPP [T j initial=25°C] ,0.0 ,0.1 ,0.2 ,0.3 ,0.4 ,0.5 ,0.6 ,0.7 ,0.8 ,0.9 ,1.0 ,1.1 0 25 50 75 100 125 150 175 200 TJ( C) Tj(°C) P(W) PP 1 10 100 1000 10000 10 100 1000 t (µs) P t = 25 °C Jinitial Figure 5. Clamping voltage versus peak pulse current (typical values) Figure 6. Forward voltage drop versus peak forward current (typical values) I (A) PP 0.01 0.1 1 10 41 41.5 42 42.5 43 43.5 44 44.5 VCL(V) Wave 8/20 µs - T initial = 25 °C J I (A) FM 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 0.2 0.4 0.6 0.8 1 1.2 175 °C 150 °C 25 °C -25 °C V (V) FM Zth(j-a)/Rth(j-a) 0.01 0.10 1.00 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 tp (s) |
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