STP33N60DM2 datasheet(3/20 Pages) STMICROELECTRONICS

部件名	STP33N60DM2

功能描述	N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 20 page

STB33N60DM2, STP33N60DM2, STW33N60DM2

Electrical ratings

DocID026854 Rev 2

3/20

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±25

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

15.5

IDM(1)

Drain current (pulsed)

PTOT

Total dissipation at Tcase = 25 °C

190

dv/dt(2)

Peak diode recovery voltage slope

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1) Pulse width is limited by safe operating area.

(2) ISD ≤ 24 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.

(3) VDS ≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

D²PAK

TO-220

TO-247

Rthj-case

Thermal resistance junction-case

0.66

°C/W

Rthj-pcb

Thermal resistance junction-pcb(1)

Rthj-amb

Thermal resistance junction-ambient

62.5

Notes:

(1)When mounted on 1 inch² FR-4, 2 Oz copper board.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax)

5.5

EAS

Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)

570

STP33N60DM2 数据表(PDF) 3 Page - STMicroelectronics

STP33N60DM2 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

数据表下载

链接网址

STP33N60DM2 数据表(PDF) 3 Page - STMicroelectronics

STP33N60DM2 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

数据表 下载

链接网址

数据表下载