STP33N60DM2 datasheet(5/20 Pages) STMICROELECTRONICS

部件名	STP33N60DM2

功能描述	N-channel 600 V, 0.110 Ω typ., 24 A MDmesh™ DM2 Power MOSFET in D²PAK, TO-220 and TO-247 packages

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

5 / 20 page

STB33N60DM2, STP33N60DM2, STW33N60DM2

Electrical characteristics

DocID026854 Rev 2

5/20

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

ISDM(1)

Source-drain current (pulsed)

VSD(2)

Forward on voltage

VGS = 0 V, ISD = 24 A

1.6

trr

Reverse recovery time

ISD = 24 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 20:

"Test circuit for inductive

load switching and diode

recovery times")

150

Qrr

Reverse recovery charge

0.5

µC

IRRM

Reverse recovery current

8.8

trr

Reverse recovery time

ISD = 24 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 20: "Test circuit

for inductive load switching

and diode recovery times")

316

Qrr

Reverse recovery charge

2.85

µC

IRRM

Reverse recovery current

Notes:

(1) Pulse width is limited by safe operating area.

(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ±250 µA, ID = 0 A

±30

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