STP33N60DM2 datasheet(4/20 Pages) STMICROELECTRONICS

4 / 20 page

Electrical characteristics

STB33N60DM2, STP33N60DM2, STW33N60DM2

4/20

DocID026854 Rev 2

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

Tcase = 125 °C

100

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 12 A

0.110

0.130

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

1870

Coss

Output capacitance

Crss

Reverse transfer

capacitance

Coss eq.(1)

Equivalent output

capacitance

VDD = 480 V, VGS = 0 V

157

Intrinsic gate resistance

f = 1 MHz, ID= 0 A

4.5

Total gate charge

VDD = 480 V, ID = 24 A,

VGS = 10 V (see Figure 19:

"Test circuit for gate charge

behavior" and Figure 23:

"Switching time waveform")

Qgs

Gate-source charge

9.8

Qgd

Gate-drain charge

Notes:

(1) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 12 A

RG = 4.7

Ω, VGS = 10 V (see

Figure 18: "Test circuit for

resistive load switching

times" and )

Rise time

td(off)

Turn-off delay time

Fall time

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