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STP3NK50Z 数据表(PDF) 1 Page - STMicroelectronics

部件名 STP3NK50Z
功能描述  Gate charge minimized
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP3NK50Z 数据表(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
August 2013
DocID025103 Rev 1
1/14
STP3NK50Z
N-channel 500 V, 2.8
Ω typ., 2.3 A Zener-protected SuperMESH™
Power MOSFET in a TO-220 package
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• Extremely high dv/dt capability
• ESD improved capability
• 100% avalanche tested
• Gate charge minimized
• Zener-protected
Applications
• Switching applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
TO-220
1
2
3
TAB
D(2, TAB)
G(1)
S(3)
AM01476v1
Order code
VDS
RDS(on)max.
ID
PTOT
STP3NK50Z
500 V
3.3
Ω
2.3 A
45 W
Table 1. Device summary
Order code
Marking
Packages
Packaging
STP3NK50Z
P3NK50Z
TO-220
Tube
www.st.com


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