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STP3NK50Z 数据表(PDF) 1 Page - STMicroelectronics |
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STP3NK50Z 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() This is information on a product in full production. August 2013 DocID025103 Rev 1 1/14 STP3NK50Z N-channel 500 V, 2.8 Ω typ., 2.3 A Zener-protected SuperMESH™ Power MOSFET in a TO-220 package Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely high dv/dt capability • ESD improved capability • 100% avalanche tested • Gate charge minimized • Zener-protected Applications • Switching applications Description This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. TO-220 1 2 3 TAB D(2, TAB) G(1) S(3) AM01476v1 Order code VDS RDS(on)max. ID PTOT STP3NK50Z 500 V 3.3 Ω 2.3 A 45 W Table 1. Device summary Order code Marking Packages Packaging STP3NK50Z P3NK50Z TO-220 Tube www.st.com |
类似零件编号 - STP3NK50Z |
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类似说明 - STP3NK50Z |
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