STP3NK50Z datasheet(3/14 Pages) STMICROELECTRONICS

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STP3NK50Z

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

500

VDGR

Drain-gate voltage (RGS=20 kΩ)500

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

2.3

Drain current (continuous) at TC = 100 °C

1.45

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

9.2

PTOT

Total dissipation at TC = 25 °C

Derating factor

0.36

W/°C

ESD

Gate-source human body model (C = 100 pF,

R = 1.5 k

Ω)

2kV

dv/dt (2)

ID ≤ 2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

2.78

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Max current during repetitive or single pulse

avalanche (pulse width limited by Tjmax)

2.3

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

120

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