STWBC datasheet(20/36 Pages) STMICROELECTRONICS

20 / 36 page

Electrical characteristics

STWBC

20/36

DocID027322 Rev 3

5.3.3

Memory characteristics

Flash program and memory/data E2PROM memory

General conditions: TA = -40 °C to 105 °C.

Table 10. Flash program memory/data E2PROM memory

Symbol

Parameter

Conditions

Min.(1) Typ.(1) Max.(1)

Unit

tPROG

Standard programming time (including erase)

for byte/word/block (1 byte/4 bytes/128 bytes)

66.6

Fast programming time for 1 block (128 bytes)

3.3

tERASE Erase time for 1 block (128 bytes)

3.3

NWE

Erase/write cycles((2)(program memory)

TA = 25 °C

10 K

Cycles

Erase/write cycles(2)(data memory)

TA = 85 °C

100 K

TA = 105 °C

35 K

tRET

Data retention (program memory) after 10 K

erase/write cycles at TA= 25 °C

TRET = 85 °C

Years

Data retention (program memory) after 10 K

erase/write cycles at TA= 25 °C

TRET = 105 °C

Data retention (data memory) after 100 K

erase/write cycles at TA= 85 °C

TRET = 85 °C

Data retention (data memory) after 35 K

erase/write cycles at TA= 105 °C

TRET = 105 °C

IDDPRG

Supply current during program and erase

cycles

-40 ºC

 TA  105 ºC

1. Data based on characterization results, not tested in production.

2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a write/erase operation

addresses a single byte.

STWBC 数据表(PDF) 20 Page - STMicroelectronics

STWBC 数据表(HTML) 20 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36

数据表下载