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STWBC 数据表(PDF) 31 Page - STMicroelectronics |
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STWBC 数据表(HTML) 31 Page - STMicroelectronics |
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31 / 36 page ![]() DocID027322 Rev 3 31/36 STWBC Electrical characteristics 36 5.4 EMC characteristics 5.4.1 Electrostatic discharge (ESD) Electrostatic discharges (3 positive then 3 negative pulses separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts * (n + 1) supply pin). Data based on characterization results, not tested in production. 5.4.2 Static latch-up Two complementary static tests are required on 10 parts to assess the latch-up performance. A supply overvoltage (applied to each power supply pin) and a current injection (applied to THE each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. Table 18. ESD absolute maximum ratings Symbol Ratings Conditions Maximum value Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = 25 °C, conforming to JEDEC/JESD22-A114E 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = 25 °C, conforming to ANSI/ESD STM 5.3.1 ESDA 500 VESD(MM) Electrostatic discharge voltage (machine model) TA = 25 °C, conforming to JEDEC/JESD-A115-A 200 Table 19. Electrical sensitivity Symbol Parameter Conditions Level LU Static latch-up class TA = 105 °C A |
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