HI

LI

V

SS

HO

HS

LO

HB

V

DD

1

2

3

4

8

7

6

5

3

LM5107

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SNVS333E – NOVEMBER 2004 – REVISED MARCH 2016

Product Folder Links: LM5107

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(1)

For WSON package it is recommended that the exposed pad on the bottom of the LM5107 be soldered to ground plane on the PCB

board and the ground plane should extend out from underneath the package to improve heat dissipation.

5 Pin Configuration and Functions

D and NGT Packages

8-Pin SOIC, WSON

Top View

Pin #

Name

Description

Application Information

SOIC

WSON

1

1

Positive gate drive supply

close to IC as possible.

2

2

HI

High side control input

The LM5107 HI input is compatible with TTL input thresholds.

Unused HI input should be tied to ground and not left open

3

3

LI

Low side control input

The LM5107 LI input is compatible with TTL input thresholds. Unused

LI input should be tied to ground and not left open.

4

4

Ground reference

All signals are referenced to this ground.

5

5

LO

Low side gate driver output

Connect to the gate of the low side N-MOS device.

6

6

HS

High side source connection

Connect to the negative terminal of the bootstrap capacitor and to the

source of the high side N-MOS device.

7

7

HO

High side gate driver output

Connect to the gate of the low side N-MOS device.

8

8

HB

High side gate driver positive

supply rail

Connect the positive terminal of the bootstrap capacitor to HB and

the negative terminal of the bootstrap capacitor to HS. The bootstrap

capacitor should be placed as close to IC as possible.

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under

which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test

conditions, see the Electrical Characteristics .

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and

specifications.

(3)

In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS voltage will generally

not exceed -1V. However in some applications, board resistance and inductance may result in the HS node exceeding this stated

= 10V, the negative transients at HS must not exceed -5V.

6 Specifications

6.1 Absolute Maximum Ratings

See

(1) (2)

-0.3V to 18V

HB to HS

−0.3V to 18V

(3)

−5V to 100V

118V

Junction Temperature

-40°C to +150°C

Storage Temperature Range

−55°C to +150°C