LM5107SD datasheet(5/20 Pages) TI1

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LM5107

www.ti.com

SNVS333E – NOVEMBER 2004 – REVISED MARCH 2016

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(1)

Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are specified through correlation

using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

(2)

The

θJA is not a constant for the package and depends on the printed circuit board design and the operating conditions.

(3)

4 layer board with Cu finished thickness 1.5/1/1/1.5 oz. Maximum die size used. 5x body length of Cu trace on PCB top. 50 x 50mm

ground and power planes embedded in PCB. See Application Note AN-1187.

6.4

Electrical Characteristics

Specifications in standard typeface are for TJ = +25°C, and those in boldface type apply over the full operating junction

temperature range. Unless otherwise specified, VDD = VHB = 12V, VSS = VHS = 0V, No Load on LO or HO.

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Units

SUPPLY CURRENTS

IDD

VDD Quiescent Current

LI = HI = 0V

0.3

0.6

IDDO

VDD Operating Current

f = 500 kHz

2.1

3.4

IHB

Total HB Quiescent Current

LI = HI = 0V

0.06

0.2

IHBO

Total HB Operating Current

f = 500 kHz

1.6

3.0

IHBS

HB to VSS Current, Quiescent

VHS = VHB = 100V

0.1

µA

IHBSO

HB to VSS Current, Operating

f = 500 kHz

0.5

INPUT PINS LI and HI

VIL

Low Level Input Voltage Threshold

0.8

1.8

VIH

High Level Input Voltage Threshold

1.8

2.2

Input Pulldown Resistance

100

180

500

Ω

UNDER VOLTAGE PROTECTION

VDDR

VDD Rising Threshold

VDDR = VDD - VSS

6.0

6.9

7.4

VDDH

VDD Threshold Hysteresis

0.5

VHBR

HB Rising Threshold

VHBR = VHB - VHS

5.7

6.6

7.1

VHBH

HB Threshold Hysteresis

0.4

BOOT STRAP DIODE

VDL

Low-Current Forward Voltage

IVDD-HB = 100 µA

VDL = VDD - VHB

0.58

0.9

VDH

High-Current Forward Voltage

IVDD-HB = 100 mA

VDH = VDD - VHB

0.82

1.1

Dynamic Resistance

IVDD-HB = 100 mA

0.8

1.5

Ω

LO GATE DRIVER

VOLL

Low-Level Output Voltage

ILO = 100 mA

VOHL = VLO – VSS

0.28

0.45

VOHL

High-Level Output Voltage

ILO = −100 mA,

VOHL = VDD– VLO

0.45

0.75

IOHL

Peak Pullup Current

VLO = 0V

1.3

IOLL

Peak Pulldown Current

VLO = 12V

1.4

HO GATE DRIVER

VOLH

Low-Level Output Voltage

IHO = 100 mA

VOLH = VHO– VHS

0.28

0.45

VOHH

High-Level Output Voltage

IHO = −100 mA

VOHH = VHB– VHO

0.45

0.75

IOHH

Peak Pullup Current

VHO = 0V

1.3

IOLH

Peak Pulldown Current

VHO = 12V

1.4

THERMAL RESISTANCE

θJA

(2)

Junction to Ambient

SOIC

160

°C/W

WSON(3)

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