DMN2016LFG datasheet(1/6 Pages) DIODES

部件名	DMN2016LFG

功能描述	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

PDF	6 Pages

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制造商	DIODES [Diodes Incorporated]

网页	http://www.diodes.com

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1 / 6 page

DMN2016LFG

Document number: DS32053 Rev. 3 - 2

1 of 6

www.diodes.com

January 2012

DMN2016LFG

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(on) max

ID

TA = 25°C

20V

18m

Ω @ VGS = 4.5V

5.2A

30m

Ω @ VGS = 1.8V

4.0A

Features and Benefits

•

Low On-Resistance

•

Low Gate Threshold Voltage

•

Low Input Capacitance

•

Fast Switching Speed

•

ESD Protected Gate

•

Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

•

Power management functions

•

Battery Pack

•

Load Switch

Mechanical Data

•

Case: U-DFN3030-8

•

Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram Below

•

Weight: 0.0172 grams (approximate)

Ordering Information (Note 6)

Part Number

Case

Packaging

DMN2016LFG-7

U-DFN3030-8

3000 / Tape & Reel

Notes:

1. No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com

Marking Information

Bottom View

Pin Configuration

ESD PROTECTED TO 2kV

Top View

Equivalent Circuit

Top View

S1

G1

S2

G2

D1/D2

56

7

8

43

2

1

5

6

7

8

4

3

2

1

N20 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last digit of year (ex: 09 for 2009)

WW = Week code (01 to 53)

N20

U-DFN3030-8

类似零件编号 - DMN2016LFG

制造商	部件名	数据表	功能描述
Diodes Incorporated	DMN2016LHAB	302Kb / 6P	Low On-Resistance Rev 5
	DMN2016LHAB	302Kb / 6P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Rev 5
	DMN2016LHAB-7	302Kb / 6P	Low On-Resistance Rev 5
	DMN2016LHAB	302Kb / 6P	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Rev 5

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