DMN2016LFG

Document number: DS32053 Rev. 3 - 2

2 of 6

www.diodes.com

January 2012

© Diodes Incorporated

DMN2016LFG

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

20

V

Gate-Source Voltage

±8

V

Continuous Drain Current (Note 4)

Steady

State

5.2

4.1

A

30

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 4)

0.77

W

169

°C/W

15.8

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

20

-

-

V

Gate-Source Breakdown Voltage

±8

-

-

V

-

-

1.0

μA

Gate-Source Leakage

-

-

±10

μA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

0.4

0.71

1.1

V

Static Drain-Source On-Resistance

-

13

18

mΩ

13.5

19

14

20.5

15

22

21

30

Forward Transfer Admittance

-

25

-

S

Diode Forward Voltage

-

0.75

1.0

V

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

-

1472

-

pF

f = 1.0MHz

Output Capacitance

-

311

-

pF

Reverse Transfer Capacitance

-

141

-

pF

Gate Resistance

-

1.46

-

Ω

Total Gate Charge

-

16.0

-

nC

Gate-Source Charge

-

36.6

-

nC

Gate-Drain Charge

-

2.1

-

nC

Turn-On Delay Time

-

2.6

-

ns

Turn-On Rise Time

-

13.2

-

ns

Turn-Off Delay Time

-

84.5

-

ns

Turn-Off Fall Time

-

46.8

-

ns

Notes:

4. Device mounted on FR-4 PCB, with minimum recommended pad layout.

5. Repetitive rating, pulse width limited by junction temperature

6. Guaranteed by design. Not subject to product testing