DMN2016LFG

Document number: DS32053 Rev. 3 - 2

4 of 6

www.diodes.com

January 2012

© Diodes Incorporated

DMN2016LFG

0

0.3

0.6

0.9

1.2

1.5

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

0.2

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 8 Diode Forward Voltage vs. Current

0

5

10

15

20

T= 25°C

A

10

100

10,000

1,000

0

5

10

15

20

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 9 Typical Junction Capacitance

C

iss

f = 1MHz

C

rss

0

5

10

15

20

25

30

35

40

Q

(nC)

Fig. 10 Gate Charge

V

= 10V

I= A

DS

D

6

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t1, PULSE DURATION TIME (sec)

Fig. 11 Transient Thermal Resistance

0.001

0.01

0.1

1

R

= r

* R

θJA(t)

(t)

θ

θ

JA

JA

R

= 160 C/W

Duty Cycle, D = t1/t2

°

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse