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Features

Epitaxial Planar Die Construction

Complementary NPN Type Available (MMBT2222A)

Mechanical Data

Case: SOT-23 Plastic Package

Weight: approx. 0.008g

.016 (0.4)

.037(0.95) .037(0.95)

.122 (3.1)

.016 (0.4)

.016 (0.4)

1

2

3

Top View

.102 (2.6)

.110 (2.8)

.094 (2.4)

TO-236AB (SOT-23)

Dimensions in inches and (millimeters)

Pin Configuration

1 = Base 2 = Emitter

3 = Collector

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General Purpose Transistor (PNP)

MMBT2907A

Ideal for Medium Power Amplification and Switching

COLLECTOR

3

1

BASE

2

EMITTER

Rating

Symbol

2907

2907A

Unit

Collector – Emitter Voltage

VCEO

–40

–60

Vdc

Collector – Base Voltage

VCBO

–60

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–600

mAdc

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board(1)

TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(2) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RqJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

– 55 to +150

°C

MDS030300B1