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General Purpose Transistor (PNP)

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product (3),(4)

(IC = –50 mAdc, VCE = –20 Vdc, f = 100 MHz)

fT

200

—

MHz

Output Capacitance

(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

8.0

pF

Input Capacitance

(VEB = –2.0 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

30

pF

SWITCHING CHARACTERISTICS

Turn–On Time

ton

—

45

Delay Time

(VCC = –30 Vdc, IC = –150 mAdc,

I

= –15 mAdc

td

—

10

ns

Rise Time

IB1 = 15 mAdc)

tr

—

40

Turn–Off Time

toff

—

100

Storage Time

(VCC = –6.0 Vdc, IC = –150 mAdc,

I

= I

= –15 mAdc

ts

—

80

ns

Fall Time

IB1 =IB2 = 15 mAdc)

tf

—

30

3. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2.0%.

4. fT is defined as the frequency at which |hfe| extrapolates to unity.

0

0

–16 V

200 ns

50

1.0 k

200

–30 V

TO OSCILLOSCOPE

RISE TIME

≤ 5.0 ns

+15 V

–6.0 V

1.0 k

37

50

1N916

1.0 k

200 ns

–30 V

TO OSCILLOSCOPE

RISE TIME

≤ 5.0 ns

INPUT

Zo = 50 Ω

PRF = 150 PPS

RISE TIME

≤ 2.0 ns

P.W. < 200 ns

INPUT

Zo = 50 Ω

PRF = 150 PPS

RISE TIME

≤ 2.0 ns

P.W. < 200 ns

Figure 1. Delay and Rise Time Test Circuit

Figure 2. Storage and Fall Time Test Circuit

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MDS030300B1