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COMCHIP

COMCHIP

General Purpose Transistor (PNP)

Page 2

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(3)

(IC = –10 mAdc, IB = 0)

MMBT2907

MMBT2907A

V(BR)CEO

–40

–60

—

—

Vdc

Collector – Base Breakdown Voltage (IC = –10 mAdc, IE = 0)

V(BR)CBO

–60

—

Vdc

Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0)

V(BR)EBO

–5.0

—

Vdc

Collector Cutoff Current (VCE = –30 Vdc, VBE(off) = –0.5 Vdc)

ICEX

—

–50

nAdc

Collector Cutoff Current

(VCB = –50 Vdc, IE = 0)

MMBT2907

MMBT2907A

(VCB = –50 Vdc, IE = 0, TA = 125°C)

MMBT2907

MMBT2907A

ICBO

—

—

—

—

–0.020

–0.010

–20

–10

µAdc

Base Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc)

IB

—

–50

nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = –0.1 mAdc, VCE = –10 Vdc)

MMBT2907

MMBT2907A

(IC = –1.0 mAdc, VCE = –10 Vdc)

MMBT2907

MMBT2907A

(IC = –10 mAdc, VCE = –10 Vdc)

MMBT2907

MMBT2907A

(IC = –150 mAdc, VCE = –10 Vdc) (3)

MMBT2907

MMBT2907A

(IC = –500 mAdc, VCE = –10 Vdc) (3)

MMBT2907

MMBT2907A

hFE

35

75

50

100

75

100

—

100

30

50

—

—

—

—

—

—

—

300

—

—

—

Collector – Emitter Saturation Voltage (3)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

VCE(sat)

—

—

–0.4

–1.6

Vdc

Base – Emitter Saturation Voltage (3)

(IC = –150 mAdc, IB = –15 mAdc)

(IC = –500 mAdc, IB = –50 mAdc)

VBE(sat)

—

—

–1.3

–2.6

Vdc

2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.

1.FR-5 = 1.0 X 0.75 X 0.062 in.

MDS030300B1