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CTL0196PS-R3 数据表(PDF) 4 Page - CT Micro International Corporation |
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CTL0196PS-R3 数据表(HTML) 4 Page - CT Micro International Corporation |
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4 / 11 page ![]() CT Micro Rev 2 Proprietary & Confidential Page 4 Jun, 2015 CTL0196PS-R3 P-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage VGS = 0V, ID = -1.9A - - -1.2 V ISD Body Diode Continuous Current - - -1.9 A 1 Note: 1.The power dissipation is limited by 150 ℃junction temperature. 2.Device mounted on a glass-epoxy board FR-4 25.4 × 25.4 mm . 2 Oz Copper Test Board 3.The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2% 4.Thermal Resistance follow JESD51-3. |
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