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CTL0196PS-R3 数据表(PDF) 3 Page - CT Micro International Corporation

部件名 CTL0196PS-R3
功能描述  P-Channel Enhancement MOSFET
PDF  11 Pages
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制造商  CTMICRO [CT Micro International Corporation]
网页  http://www.ct-micro.com/
标志 CTMICRO - CT Micro International Corporation

CTL0196PS-R3 数据表(HTML) 3 Page - CT Micro International Corporation

  CTL0196PS-R3 Datasheet HTML 1Page - CT Micro International Corporation CTL0196PS-R3 Datasheet HTML 2Page - CT Micro International Corporation CTL0196PS-R3 Datasheet HTML 3Page - CT Micro International Corporation CTL0196PS-R3 Datasheet HTML 4Page - CT Micro International Corporation CTL0196PS-R3 Datasheet HTML 5Page - CT Micro International Corporation CTL0196PS-R3 Datasheet HTML 6Page - CT Micro International Corporation CTL0196PS-R3 Datasheet HTML 7Page - CT Micro International Corporation CTL0196PS-R3 Datasheet HTML 8Page - CT Micro International Corporation CTL0196PS-R3 Datasheet HTML 9Page - CT Micro International Corporation Next Button
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CT Micro
Rev 2
Proprietary & Confidential
Page 3
Jun, 2015
CTL0196PS-R3
P-Channel Enhancement MOSFET
Electrical Characteristics T
A = 25°C (unless otherwise specified)
Static Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= -250µA
-60
-
-
V
IDSS
Drain-Source Leakage Current
VDS = -60V, VGS = 0V
-
-
-1
µA
IGSS
Gate-Source Leakage Current
VGS =
±20V, VDS = 0V
-
-
±100
nA
On Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
RDS(ON)
Drain-Source On-Resistance
VGS = -4.5V, ID = -1.4A
-
170
215
m
3
VGS = -10V, ID = -1.8A
-
200
260
m
VGS(th)
Gate-Source Threshold Voltage
VGS = VDS, I ID =-250µA
-1
---
-3
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
CISS
Input Capacitance
VGS =0V,
-
365
-
pF
COSS
Output Capacitance
VDS =-25V
-
40
-
CRSS
Reverse Transfer Capacitance
f=1MHz
-
12
-
Switching Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
Max
Units
Notes
TD(ON)
Turn-On Delay Time
VDS = -30V ,
VGS = -10V,
RG = 3.3 ,
RL= 30 ,
-
20
-
ns
TR
Rise Time
-
33
-
TD(OFF)
Turn-Off Delay Time
-
5.2
-
TF
Fall Time
-
3.8
-
QG
Total Gate Charge
VDS = -48V ,
-
6.3
-
nC
QGS
Gate-Source Charge
VGS = -4.5V,
-
2.3
-
QGD
Gate-Drain Charge
ID = -1A
-
1.8
-



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