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CLC5526PCASM 数据表(PDF) 4 Page - National Semiconductor (TI) |
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CLC5526PCASM 数据表(HTML) 4 Page - National Semiconductor (TI) |
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4 / 10 page ![]() Electrical Characteristics (Continued) The following specifications apply for V CC = +5V, RL = 1kΩ maximum gain setting. Boldface limits apply for TA = Tmin = −40˚C to T max = +85˚C, all other limits TA = 25˚C (Notes 2, 3, 4). Symbol Parameter Conditions Min Typ Max Units GAIN PARAMETERS Maximum Gain 30 dB Minimum Gain −12 dB Gain Step Size 6.02 dB Gain Step Accuracy (1 sigma) 0.03 dB Cumulative Gain Step Error (1 sigma) 0.085 dB DIGITAL INPUTS/TIMING Logic Compatibility TTL/CMOS V V IL Logic Input Low Voltage 0.8 V V IH Logic Input High Voltage 2.0 V T SU Setup Time 3ns T HOLD Hold Time 3ns T PW Minimum Pulse Width 3 ns POWER REQUIREMENTS I CC +5V Supply Current 48 60 mA Shutdown 9mA Note 1: “Absolute Maximum Ratings” are limited values, to be applied individually, and beyond which the serviceability of the circuit may be impaired. Functional op- erability under any of these conditions is not necessarily implied. Exposure to maximum ratings for extended periods may affect device reliability. Note 2: Limits are 100% tested at 25˚C. Note 3: Typical specifications are the mean values of the distributions of deliverable amplifiers tested to date. Note 4: Outgoing quality levels are determined from tested parameters. Typical Performance Characteristics (V CC = +5V, RL = 1kΩ, max gain; unless specified) Gain vs Frequency DS015016-3 Transconductance vs Frequency DS015016-4 2nd and 3rd Harmonic Distortion vs Frequency DS015016-5 2-Tone, 3rd Order Intermodulation Output Intercept vs Frequency DS015016-6 Distortion vs Gain Setting DS015016-7 Distortion vs Temperature DS015016-8 www.national.com 4 |
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