CSD13306W datasheet(6/12 Pages) TI

部件名	CSD13306W

功能描述	CSD13306W 12 V N Channel NexFET??Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

制造商	TI [Texas Instruments]

网页	http://www.ti.com

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6 / 12 page

VDS - Drain-To-Source Voltage (V)

0.1

100

D010

100 ms

10 ms

1 ms

100 µs

10 µs

TC - Case Temperature (GC)

-45

-20

105

130

155

180

0.5

1.5

2.5

3.5

4.5

D011

TC - Case Temperature (GC)

-75

-50

-25

100

125

150

175

0.7

0.8

0.9

1.1

1.2

1.3

1.4

D008

VGS = 2.5 V

VGS = 4.5 V

VSD - Source-To-Drain Voltage (V)

0.2

0.4

0.6

0.8

0.0001

0.001

0.01

0.1

D009

TC = 25GC

TC = 125GC

CSD13306W

SLPS537 – MARCH 2015

www.ti.com

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

ID = 1.5 A

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

Single Pulse, Max RθJA = 230°C/W

Figure 10. Maximum Safe Operating Area

Figure 11. Maximum Drain Current vs Temperature

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