CSD13306W datasheet(1/12 Pages) TI

部件名	CSD13306W

功能描述	CSD13306W 12 V N Channel NexFET??Power MOSFET

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制造商	TI [Texas Instruments]

网页	http://www.ti.com

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Qg - Gate Charge (nC)

0

1

2

3

4

5

6

7

8

9

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

D004

ID = 1.5 A

VDS = 6 V

VGS - Gate-To-Source Voltage (V)

0

1

2

3

4

5

6

7

8

9

10

0

5

10

15

20

25

30

35

40

D007

TC = 25°C, I D = 1.5 A

TC = 125°C, I D = 1.5 A

G

S

D

S

D

Product

Folder

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Buy

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CSD13306W

SLPS537 – MARCH 2015

CSD13306W 12 V N Channel NexFET™ Power MOSFET

1 Features

Product Summary

1

•

Ultra Low on Resistance

TA = 25°C

TYPICAL VALUE

UNIT

•

Low Qg and Qgd

VDS

Drain-to-Source Voltage

12

V

•

Small Footprint 1 × 1.5 mm

Qg

Gate Charge Total (4.5 V)

8.6

nC

Qgd

Gate Charge Gate-to-Drain

3.0

nC

•

Low Profile 0.62 mm Height

VGS = 2.5 V

12.9

m

Ω

•

Pb Free

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V

8.8

m

Ω

•

RoHS Compliant

VGS(th)

Voltage Threshold

1.0

V

•

Halogen Free

Ordering Information(1)

2 Applications

Device

Qty

Media

Package

Ship

•

Battery Management

CSD13306W

3000

7-Inch Reel

1.0 mm × 1.5 mm

Tape and

Wafer Level

•

Load Switch

Reel

CSD13306WT

250

7-Inch Reel

Package

•

Battery Protection

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

3 Description

This 8.8 m

Ω, 12 V, N-Channel device is designed to

Absolute Maximum Ratings

deliver the lowest on resistance and gate charge in a

TA = 25°C

VALUE

UNIT

small 1 x 1.5 mm outline with excellent thermal

VDS

Drain-to-Source Voltage

12

V

characteristics and an ultra low profile.

VGS

Gate-to-Source Voltage

±10

V

ID

Continuous Drain Current(1)

3.5

A

Top View

IDM

Pulsed Drain Current (2)

44

A

PD

Power Dissipation(3)

1.9

W

Tstg

Storage Temperature Range

–55 to 150

°C

TJ

Operating Junction Temperature Range

(1) Device Operating at a temperature of 105ºC

(2) Min Cu Typ RθJA = 230ºC/W, Pulse width ≤100 μs, duty cycle

≤1%

(3) Max Cu Typ RθJA = 65ºC/W

RDS(on) vs VGS

Gate Charge

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

类似零件编号 - CSD13306W

制造商	部件名	数据表	功能描述
Texas Instruments	CSD13306W	672Kb / 11P	CSD13306W 12 V N Channel NexFET™ Power MOSFET MARCH 2015
	CSD13306W.B	672Kb / 11P	CSD13306W 12 V N Channel NexFET™ Power MOSFET MARCH 2015
	CSD13306WT	672Kb / 11P	CSD13306W 12 V N Channel NexFET™ Power MOSFET MARCH 2015
	CSD13306WT.B	672Kb / 11P	CSD13306W 12 V N Channel NexFET™ Power MOSFET MARCH 2015
	CSD13306W	1Mb / 17P	CSD13306W 12 V N Channel NexFETv Power MOSFET

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类似说明 - CSD13306W

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