数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

CSD13306W 数据表(PDF) 3 Page - Texas Instruments

Click here to check the latest version.
部件名 CSD13306W
功能描述  CSD13306W 12 V N Channel NexFET??Power MOSFET
PDF  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

CSD13306W 数据表(HTML) 3 Page - Texas Instruments

  CSD13306W Datasheet HTML 1Page - Texas Instruments CSD13306W Datasheet HTML 2Page - Texas Instruments CSD13306W Datasheet HTML 3Page - Texas Instruments CSD13306W Datasheet HTML 4Page - Texas Instruments CSD13306W Datasheet HTML 5Page - Texas Instruments CSD13306W Datasheet HTML 6Page - Texas Instruments CSD13306W Datasheet HTML 7Page - Texas Instruments CSD13306W Datasheet HTML 8Page - Texas Instruments CSD13306W Datasheet HTML 9Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 12 page
background image
CSD13306W
www.ti.com
SLPS537 – MARCH 2015
5 Specifications
5.1 Electrical Characteristics
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 250 μA
12
V
IDSS
Drain-to-Source Leakage Current
VGS = 0 V, VDS = 9.6 V
1
μA
IGSS
Gate-to-Source Leakage Current
VDS = 0 V, VGS = 10 V
100
nA
VGS(th)
Gate-to-Source Threshold Voltage
VDS = VGS, ID = 250 μA
0.7
1.0
1.3
V
VGS = 2.5 V, ID = 1.5 A
12.9
15.5
m
RDS(on)
Drain-to-Source On-Resistance
VGS = 4.5 V, ID = 1.5 A
8.8
10.2
m
gƒs
Transconductance
VDS = 1.2 V, ID =1.5 A
15
S
DYNAMIC CHARACTERISTICS
CISS
Input Capacitance
1050
1370
pF
COSS
Output Capacitance
VGS = 0 V, VDS = 6 V, ƒ = 1 MHz
324
421
pF
CRSS
Reverse Transfer Capacitance
226
294
pF
Rg
4.2
8.4
Qg
Gate Charge Total (4.5V)
8.6
11.2
nC
Qgd
Gate Charge Gate-to-Drain
3.0
nC
VDS = 6 V, ID = 1.5 A
Qgs
Gate Charge Gate-to-Source
1.1
nC
Qg(th)
Gate Charge at Vth
1.2
nC
QOSS
Output Charge
VDS = 6 V, VGS = 0 V
3.3
nC
td(on)
Turn On Delay Time
7
ns
tr
Rise Time
11
ns
VDS = 6 V, VGS = 4.5 V, ID = 1.5 A
RG = 4 Ω
td(off)
Turn Off Delay Time
20
ns
tƒ
Fall Time
8
ns
DIODE CHARACTERISTICS
VSD
Diode Forward Voltage
IS = 1.5 A, VGS = 0 V
0.7
1.0
V
Qrr
Reverse Recovery Charge
14.8
nC
VDS= 6 V, IF = 1.5 A, di/dt = 200 A/μs
trr
Reverse Recovery Time
23
ns
5.2 Thermal Information
TA = 25°C unless otherwise stated
THERMAL METRIC
MIN
TYP
MAX
UNIT
Junction-to-Ambient Thermal Resistance (1)
230
RθJA
°C/W
Junction-to-Ambient Thermal Resistance (2)
65
(1)
Device mounted on FR4 material with minimum Cu mounting area
(2)
Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
Typ RθJA = 230°C/W
Typ RθJA = 65°C/W
when mounted on
when mounted on
minimum pad area of
1 inch2 of 2 oz. Cu.
2 oz. Cu.
Copyright © 2015, Texas Instruments Incorporated
Submit Documentation Feedback
3



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com