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CSD13306W 数据表(PDF) 3 Page - Texas Instruments |
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CSD13306W 数据表(HTML) 3 Page - Texas Instruments |
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3 / 12 page ![]() CSD13306W www.ti.com SLPS537 – MARCH 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 12 V IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 9.6 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 10 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 0.7 1.0 1.3 V VGS = 2.5 V, ID = 1.5 A 12.9 15.5 m Ω RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V, ID = 1.5 A 8.8 10.2 m Ω gƒs Transconductance VDS = 1.2 V, ID =1.5 A 15 S DYNAMIC CHARACTERISTICS CISS Input Capacitance 1050 1370 pF COSS Output Capacitance VGS = 0 V, VDS = 6 V, ƒ = 1 MHz 324 421 pF CRSS Reverse Transfer Capacitance 226 294 pF Rg 4.2 8.4 Ω Qg Gate Charge Total (4.5V) 8.6 11.2 nC Qgd Gate Charge Gate-to-Drain 3.0 nC VDS = 6 V, ID = 1.5 A Qgs Gate Charge Gate-to-Source 1.1 nC Qg(th) Gate Charge at Vth 1.2 nC QOSS Output Charge VDS = 6 V, VGS = 0 V 3.3 nC td(on) Turn On Delay Time 7 ns tr Rise Time 11 ns VDS = 6 V, VGS = 4.5 V, ID = 1.5 A RG = 4 Ω td(off) Turn Off Delay Time 20 ns tƒ Fall Time 8 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage IS = 1.5 A, VGS = 0 V 0.7 1.0 V Qrr Reverse Recovery Charge 14.8 nC VDS= 6 V, IF = 1.5 A, di/dt = 200 A/μs trr Reverse Recovery Time 23 ns 5.2 Thermal Information TA = 25°C unless otherwise stated THERMAL METRIC MIN TYP MAX UNIT Junction-to-Ambient Thermal Resistance (1) 230 RθJA °C/W Junction-to-Ambient Thermal Resistance (2) 65 (1) Device mounted on FR4 material with minimum Cu mounting area (2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. Typ RθJA = 230°C/W Typ RθJA = 65°C/W when mounted on when mounted on minimum pad area of 1 inch2 of 2 oz. Cu. 2 oz. Cu. Copyright © 2015, Texas Instruments Incorporated Submit Documentation Feedback 3 |
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