STL8NH3LL datasheet(2/7 Pages) STMICROELECTRONICS

2 / 7 page

STL8NH3LL

2/7

Table 3: Absolute Maximum ratings

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On /Off

Table 6: Dynamic

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS= 0)

VDGR

Drain-gate Voltage (RGS= 20 kΩ)

VGS

Gate- source Voltage

± 16

ID (1)

Drain Current (continuous) at TC= 25°C (Steady State)

ID (2)

Drain Current (continuous) at TC= 100°C (Steady State)

IDM (3)

Drain Current (pulsed)

PTOT (1)

Total Dissipation at TC= 25°C

PTOT (2)

Total Dissipation at TC= 25°C (Steady State)

1.56

Derating Factor (2)

0.4

W/°C

Tstg

Storage Temperature

– 55 to 150

°C

Max. Operating Junction Temperature

Rthj-Case

Thermal Resistance Junction-Case Max

2.5

°C/W

Rthj-a (4)

Thermal Operating Junction-ambient

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source Breakdown

Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 16 V

± 100

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(on

Static Drain-source On

Resistance

VGS = 10 V, ID = 4 A

VGS = 4.5 V, ID = 4 A

0.012

0.0135

0.015

0.017

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (5)

Forward Transconductance

VDS = 15V, ID= 4A

TBD

Ciss

Input Capacitance

VDS= 25V, f= 1 MHz, VGS= 0

965

Coss

Output Capacitance

285

Crss

Reverse Transfer

Capacitance

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