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STL8NH3LL 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL8NH3LL
功能描述  N-CHANNEL 30 V - 0.012 ??- 8 A PowerFLAT??ULTRA LOW GATE CHARGE STripFET??MOSFET
PDF  7 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL8NH3LL 数据表(HTML) 3 Page - STMicroelectronics

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STL8NH3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Switching On
Table 8: Switching
Table 9: Source Drain Diode
(1) The value is rated according Rthj-c
(2) The value is rated according Rthj-a
(3) Pulse width limited by safe operating area.
(4) When mounted on minimum footprint
(5) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD= 15 V, ID= 4 A
RG =4.7Ω, VGS = 4.5V
(see Figure 3)
15
ns
tr
Rise Time
32
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD= 15V, ID= 8 A, VGS= 4.5 V
(see Figure 5)
9
3.7
3
12
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD= 15 V, ID= 4 A,
RG=4.7Ω, VGS= 4.5 V
(see Figure 3)
18
8.5
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM(3)
Source-drain Current
Source-drain Current (pulsed)
8
32
A
A
VSD (5)
Forward On Voltage
ISD = 8 A, VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 8 A, di/dt = 100 A/µs
VDD = 20V, Tj = 150°C
(see Figure 4)
24
17.4
1.45
ns
nC
A



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