3

2

1

A

B

C

D

4

GND

SCL

C1P

OUTL

BIAS

OUTR

C1N

INL+

INR+

SDA

CPGND

INL-

INR-

COM

LM48822, LM48822TLEVAL

www.ti.com

SNAS456C – MAY 2008 – REVISED MAY 2013

Connection Diagram

Top View

Figure 2. DSBGA Package

2mm x 2mm x 0.8mm

See Package Number YZR001611A

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2) (3)

6V

Storage Temperature

−65°C to +150°C

Input Voltage

Internally Limited

2000V

150V

Junction Temperature

150°C

Thermal Resistance

63°C/W

Soldering Information See AN-1112 “DSBGA Wafer Level Chip Scale package”

(1)

“Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of

device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum

RatingsRatings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The

Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond

such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified

(2)

The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as

otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and

are not ensured.

(3)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(4)

lower.

(5)

Human body model, applicable std. JESD22-A114C.

(6)

Machine model, applicable std. JESD22-A115-A.

Copyright © 2008–2013, Texas Instruments Incorporated

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