IPS024G

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3

Recommended Operating Conditions

These values are given for a quick design. For operation outside these conditions, please consult the application notes.

Symbol Parameter

Min.

Max.

Units

Vds (max) Continuous drain to source voltage

—

35

VIH

High level input voltage

4

6

VIL

Low level input voltage

0

0.5

Ids

Continuous drain current

—

0.7

A

Rin

Recommended resistor in series with IN pin

0.5

5

k

Ω

Tr-in (max) Max recommended rise time for IN signal (see fig. 2)

—

1

µS

Max. frequency in short circuit condition (Vcc = 14V)

0

1

kHz

V

(2) Operations at higher switching frequencies is possible. See Appl. notes.

Switching Electrical Characteristics

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Ton

Turn-on delay time

0.15

0.5

1

Tr

Rise time

0.4

0.9

2

Trf

Time to 130% final Rds(on)

2

6

12

Toff

Turn-off delay time

0.8

2

3.5

Tf

Fall time

0.5

1.3

2.5

Qin

Total gate charge

—

3.3

—

nC

Vin = 5V

See figure 2

See figure 2

µs

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Rds(on)

ON state resistance

Tj = 25

100

135

160

Tj = 150

—

235

290

Idss 1

Drain to source leakage current

0

0.01

25

Vcc = 14V, Tj = 25

Idss 2

Drain to source leakage current

0

0.1

50

Vcc = 40V, Tj = 25

48

54

56

50

56

60

7

8

9.5

Iin = 1 mA

Vth

IN threshold voltage

1

1.5

2

Id = 50mA, Vds = 14V

Iin, -on

ON state IN positive current

25

90

200

Vin = 5V

Iin, -off

OFF state IN positive current

50

130

250

Vin = 5V

over-current triggered

Static Electrical Characteristics

Standard footprint 70

m

Ω

Vin = 5V, Ids = 1A

V

µA

µA