Features

IPS024G

QUAD FULLY PROTECTED POWER MOSFET SWITCH

Data Sheet No.PD60204

Description

The IPS024G are fully protected quad low side SMART

POWER MOSFETs respectively. They feature over-

current, over-temperature, ESD protection and drain

to source active clamp.These devices combine a

HEXFET® POWER MOSFET and a gate driver. They

offer full protection and high reliability required in

harsh environments. The driver allows short switch-

ing times and provides efficient protection by turning

OFF the power MOSFET when the temperature ex-

ceeds 165

These devices restart once the input is cycled. The

avalanche capability is significantly enhanced by

the active clamp and covers most inductive load

demagnetizations.

Package

Product Summary

150m

Ω (max)

50V

6A

1.5

µs

16-Lead SOIC

IPS024G

(Quad)

www.irf.com

1

Typical Connection

S

Q

Load

D

S

control

IN

R in series

(if needed)

Logic signal

(Refer to lead assignment for correct pin configuration)