IPS024G datasheet(2/10 Pages) IRF

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IPS024G

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Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters

are referenced to SOURCE lead. (TAmbient = 25

oC unless otherwise specified). PCB mounting uses the standard foot-

print with 70

µm copper thickness.

Symbol Parameter

Min.

Max.

Units

Test Conditions

Vds

Maximum drain to source voltage

—

Vin

Maximum input voltage

-0.3

Iin, max

Maximum IN current

-10

+10

Isd cont.

Diode max. continuous current (1)

(∑ lsd mosfets, rth=125oC/W)

—

2.3

Isd pulsed Diode max. pulsed current (1) (for ea. mosfet)

—10

Maximum power dissipation

(1)

(∑ Pd mosfets, rth=125oC/W)

—

ESD1

Electrostatic discharge voltage (Human Body)

—

C=100pF, R=1500

Ω,

ESD2

Electrostatic discharge voltage (Machine Model)

—

0.5

C=200pF, R=0

Ω, L=10µH

T stor.

Max. storage temperature

-55

150

Tj max.

Max. junction temperature

-40

+150

(1) Limited by junction temperature (pulsed current limited also by internal wiring)

Symbol Parameter

Min.

Typ.

Max. Units Test Conditions

Rth1

Thermal resistance with standard footprint

(4 mos on)

(4 mosfets on)

—

Rth2

Thermal resistance with standard footprint

(1mos on)

(1 mosfet on)

—

120

—

Rth3

Thermal resistance with 1" square footprint

(4 mos on)

(4 mosfets on)

—

Thermal Characteristics

oC/W

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