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MCP2221 数据表(PDF) 59 Page - Microchip Technology |
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MCP2221 数据表(HTML) 59 Page - Microchip Technology |
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59 / 80 page ![]() 2015 Microchip Technology Inc. DS20005292B-page 59 MCP2221 4.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (†)(1) Ambient temperature under bias............................................................................................................... -40°C to +85°C Storage temperature .............................................................................................................................. -65°C to +150°C Voltage on VDD with respect to VSS ......................................................................................................... -0.3V to +6.0V Voltage on RST with respect to VSS ......................................................................................................... -0.3V to +9.0V Voltage on VUSB pin with respect to VSS .................................................................................................. -0.3V to +4.0V Voltage on D+ and D- pins with respect to VSS ............................................................................ -0.3V to (VUSB + 0.3V) Voltage on all other pins with respect to VSS ................................................................................. -0.3V to (VDD + 0.3V) Total power dissipation(2) ..................................................................................................................................... 800 mW Maximum current out of VSS pin ............................................................................................................................ 95 mA Maximum current into VDD pin ............................................................................................................................... 95 mA Clamp current, IK (VPIN <0 or VPIN >VDD) 20 mA Maximum output current sunk by any I/O pin .........................................................................................................25 mA Maximum output current sourced by any I/O pin ....................................................................................................25 mA Maximum current sunk by all ports ......................................................................................................................... 90 mA Maximum current sourced by all ports ................................................................................................................... 90 mA Note 1: VUSB must always be VDD +0.3V. 2: Power dissipation is calculated as follows: PDIS =VDD x{IDD – IOH} + {(VDD – VOH)x IOH}+ (VOL xIOL). † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for extended periods may affect device reliability. |
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