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MCP14A0153 数据表(PDF) 3 Page - Microchip Technology

部件名 MCP14A0153
功能描述  1.5A Dual MOSFET Driver with Low Threshold Input And Enable
PDF  30 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MCP14A0153 数据表(HTML) 3 Page - Microchip Technology

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 2015 Microchip Technology Inc.
DS20005470A-page 3
MCP14A0153/4/5
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD, Supply Voltage.............................................+20V
VIN, Input Voltage...........(VDD + 0.3V) to (GND - 0.3V)
VEN, Enable Voltage.......(VDD + 0.3V) to (GND - 0.3V)
Package Power Dissipation (TA = +50°C)
8L MSOP ...................................................... 0.63W
8L SOIC ........................................................ 1.00W
8L 2 x 3 TDFN............................................... 1.86W
ESD Protection on all Pins .........................2 kV (HBM)
....................................................................200V (MM)
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated
in
the
operational
sections
of
this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, TA = +25°C, with 4.5V  VDD  18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Input
Input Voltage Range
VIN
GND - 0.3
VDD +0.3
V
Logic ‘1’ High Input Voltage
VIH
2.0
1.6
V
Logic ‘0’ Low Input Voltage
VIL
—1.2
0.8
V
Input Voltage Hysteresis
VHYST(IN)
—0.4
V
Input Current
IIN
-1
+1
µA
0V
 VIN  VDD
Enable
Enable Voltage Range
VEN
GND - 0.3V
VDD +0.3
V
Logic ‘1’ High Enable Voltage
VEH
21.6
—V
Logic ‘0’ Low Enable Voltage
VEL
—1.2
0.8
V
Enable Voltage Hysteresis
VHYST(EN)
—0.4
V
Enable Pin Pull-Up Resistance
RENBL
—1.8
MΩ
VDD =18V, EN = GND
Enable Input Current
IEN
—10
µA
VDD =18V, EN = GND
Propagation Delay
tD3
—25
32
ns
VDD =18V, VEN =5V,
see Figure 4-3, (Note 1)
Propagation Delay
tD4
—24
31
ns
VDD =18V, VEN =5V,
see Figure 4-3, (Note 1)
Output
High Output Voltage
VOH
VDD -0.025
V
IOUT =0A
Low Output Voltage
VOL
——
0.025
V
IOUT =0A
Output Resistance, High
ROH
—4.5
6.5
IOUT =10 mA, VDD =18V
Output Resistance, Low
ROL
—3.0
4.5
IOUT =10 mA, VDD =18V
Peak Output Current
IPK
—1.5
A
VDD =18V (Note 1)
Latch-Up Protection Withstand
Reverse Current
IREV
0.5
A
Duty cycle
 2%, t  300 µs
(Note 1)
Switching Time (Note 1)
Rise Time
tR
11.5
18.5
ns
VDD =18V, CL = 1000 pF,
see Figure 4-1, Figure 4-2
(Note 1)
Note 1:
Tested during characterization, not production tested.



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