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MCP14A0153 数据表(PDF) 4 Page - Microchip Technology |
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MCP14A0153 数据表(HTML) 4 Page - Microchip Technology |
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4 / 30 page ![]() MCP14A0153/4/5 DS20005470A-page 4 2015 Microchip Technology Inc. Fall Time tF —10 17 ns VDD =18V, CL = 1000 pF, see Figure 4-1, Figure 4-2 (Note 1) Delay Time tD1 —25 32 ns VDD =18V, VIN =5V, see Figure 4-1, Figure 4-2 (Note 1) tD2 —24 31 ns VDD =18V, VIN =5V, see Figure 4-1, Figure 4-2 (Note 1) Power Supply Supply Voltage VDD 4.5 — 18 V Power Supply Current IDD — 675 1120 µA VINA/B =3V, VENA/B =3V IDD — 715 1160 µA VINA/B =0V, VENA/B =3V IDD — 715 1160 µA VINA/B =3V, VENA/B =0V IDD — 750 1200 µA VINA/B =0V, VENA/B =0V DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) (Note 1) Electrical Specifications: Unless otherwise indicated, over the operating range with 4.5V VDD 18V. Parameters Sym. Min. Typ. Max. Units Conditions Input Input Voltage Range VIN GND - 0.3V — VDD +0.3 V Logic ‘1’ High Input Voltage VIH 2.0 1.6 — V Logic ‘0’ Low Input Voltage VIL —1.2 1.8 V Input Voltage Hysteresis VHYST(IN) —0.4 — V Input Current IIN -10 — +10 µA 0V VIN VDD Enable Enable Voltage Range VEN GND - 0.3V — VDD +0.3 V Logic ‘1’ High Enable Voltage VEH 2.0 1.6 — V Logic ‘0’ Low Enable Voltage VEL —1.2 1.8 V Enable Voltage Hysteresis VHYST(EN) —0.4 — V Enable Input Current IEN —12 — µA VDD =18V, EN = GND Propagation Delay tD3 —28 35 ns VDD =18V, VEN =5V, TA =+125°C, see Figure 4-3 Propagation Delay tD4 —27 34 ns VDD =18V, VEN =5V, TA =+125°C, see Figure 4-3 Output High Output Voltage VOH VDD - 0.025 — — V DC Test Low Output Voltage VOL — — 0.025 V DC Test Output Resistance, High ROH —— 9 Ω IOUT =10 mA, VDD =18V Output Resistance, Low ROL —— 6.5 Ω IOUT =10 mA, VDD =18V Note 1: Tested during characterization, not production tested. DC CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, TA = +25°C, with 4.5V VDD 18V. Parameters Sym. Min. Typ. Max. Units Conditions Note 1: Tested during characterization, not production tested. |
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