 2015 Microchip Technology Inc.

DS20005470A-page 5

MCP14A0153/4/5

Switching Time (Note 1)

Rise Time

—14

21

ns

Figure 4-2

Fall Time

—13

20

ns

Figure 4-2

Delay Time

—28

35

ns

see Figure 4-1, Figure 4-2

—27

34

see Figure 4-1, Figure 4-2

Power Supply

Supply Voltage

4.5

—

18

V

Power Supply Current

—

—

1520

µA

—

—

1560

µA

—

—

1560

µA

—

—

1600

µA

TEMPERATURE CHARACTERISTICS

Electrical Specifications:

Unless otherwise noted, all parameters apply with 4.5V

Parameter

Sym.

Min.

Typ.

Max. Units

Comments

Temperature Ranges

Specified Temperature Range

-40

—

+125

°C

Maximum Junction Temperature

——

+150

°C

Storage Temperature Range

-65

—

+150

°C

Package Thermal Information

Junction-to-Ambient Thermal Resistance, 8LD MSOP

—158

—

°C/W Note 1

Junction-to-Ambient Thermal Resistance, 8LD SOIC

—99.8—

°C/W Note 1

Junction-to-Ambient Thermal Resistance, 8LD TDFN

—53.7—

°C/W Note 1

Junction-to-Top Characterization Parameter, 8LD MSOP

—2.4

—

°C/W Note 1

Junction-to-Top Characterization Parameter, 8LD SOIC

—5.9

—

°C/W Note 1

Junction-to-Top Characterization Parameter, 8LD TDFN

—0.5

—

°C/W Note 1

Junction-to-Board Characterization Parameter, 8LD MSOP

—115.2

—°C/W Note 1

Junction-to-Board Characterization Parameter, 8LD SOIC

—64.8—

°C/W Note 1

Junction-to-Board Characterization Parameter, 8LD TDFN

—24.4—

°C/W Note 1

Note 1:

Parameter is determined using a High K 2S2P 4-Layer board as described in JESD 51-7, as well as

JESD 51-5 for packages with exposed pads.

Electrical Specifications:

Unless otherwise indicated, over the operating range with 4.5V

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1:

Tested during characterization, not production tested.