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TLE7183QUSCD3 数据表(PDF) 13 Page - Infineon Technologies AG

部件名 TLE7183QUSCD3
功能描述  3 Phase Driver IC Automotive Power
PDF  28 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

TLE7183QUSCD3 数据表(HTML) 13 Page - Infineon Technologies AG

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Data Sheet
13
Rev. 1.1, 2016-01-28
TLE7183QU
Description and Electrical Characteristics
5.1.4
Electrical Characteristics
Electrical Characteristics MOSFET drivers - DC Characteristics
V
S = 5.5 to 20V, Tj = -40 to +150°C, fPWM < 25kHz, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit
Conditions
Min.
Typ.
Max.
5.1.1
Low Level Output Voltage
VG_LL
–
–
0.2
V
I=30mA
5.1.2
High Level Output Voltage, Low
Side
VG_HL
7.5
–
13
V
I=-2mA; Vs=5.5..8V
5.1.3
High Level Output Voltage, High
Side
VG_HL
6.5
–
13
V
I=-2mA; Vs=5.5..8V
5.1.4
High Level Output Voltage
VG_HL
9
–
13
V
I=-2mA; Vs=8..20V
5.1.5
High Level Output Voltage
Difference
dVG_H
–
–
1.0
V
I=-100mA; Vs=20V
5.1.6
Gate Drive Output Voltage (device
disabled via ENAx)
VG(DIS)
–
–
0.2
V
Disabled;
Vs=5.5..20V;
I=10mA
5.1.7
Gate Drive Output Voltage
Tj=-40°C
Tj=25°C
Tj=150°C
VG_5
––
1.4
1.2
1.0
V
UVLO; Vs<=5.5V
5.1.8
Gate Drive Output Voltage High
Side
Tj=-40°C
Tj=25°C
Tj=150°C
VG_HS
––
1.4
1.2
1.0
VOvervoltage
5.1.9
Gate Drive Output Voltage Low
Side
VG_LS
–
–
0.2
V
Overvoltage
5.1.10
Low Level Input Voltage of Ixx,
ENAx
VI_LL
––
1.0
V
–
5.1.11
High Level Input Voltage of Ixx,
ENAx
VI_HL
2.0
––V
–
5.1.12
Low Level Input Voltage of INH
VI_LL
–
–
0.75
V
–
5.1.13
High Level Input Voltage of INH
VI_HL
2.1
––V
–
5.1.14
Input Hysteresis of IHx, ILx, ENAx dVI
50
–
–
mV
Vs=5.5..8V
5.1.15
Input Hysteresis of IHx, ILx, ENAx dVI
100
200
–-
mV
Vs=8..20V
5.1.16
Output Bias Current SHx
ISHx
-1.6
-1.0
-0.3
mA
VSHx=0..(Vs+1);
ILx=low; IHx=high
5.1.17
Output Bias Current SLx
ISLx
-1.6
-1.0
-0.3
mA
VSLx=0..7V;
ILx=low; IHx=high



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