TLE7183QUSCD3 datasheet(14/28 Pages) INFINEON

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TLE7183QU

Description and Electrical Characteristics

Data Sheet

Rev. 1.1, 2016-01-28

Electrical Characteristics MOSFET drivers - Dynamic Characteristics

S = 5.5 to 20V, Tj = -40 to +150°C, fPWM < 25kHz, all voltages with respect to ground, positive current flowing into pin

(unless otherwise specified)

Pos.

Parameter

Symbol

Limit Values

Unit

Conditions

Min.

Typ.

Max.

5.1.18

Minimum Internal Dead Time

DT_MIN

–

200

DT pin to GND

(RDT=0Ω)

5.1.19

Programmable Internal Dead Time t

0.26

0.64

1.07

2.02

0.41

1.05

1.85

3.82

0.56

1.45

2.63

5.62

µs

RDT=10 kΩ

RDT=47 kΩ

RDT=100 kΩ

RDT=1000 kΩ

5.1.20

Maximum Internal Dead Time

DT_MAX

2.33

–

6.35

µs

DT pin open

5.1.21

Turn On Current, Peak

G(on)

–

-0.8

–

VGxx-VSxx=0V;

Vs=5.5..8V;

C=22nF;

RLoad=1Ω

5.1.22

Turn On Current, Peak

G(on)

–

-1.5

–

VGxx-VSxx=0V;

Vs=8..20V

C=22nF;

RLoad=1Ω

5.1.23

Turn Off current, Peak

G(off)

–

1.5

–

VGxx-VSxx=10V;

Vs=8..20V

C=22nF;

RLoad=1Ω

5.1.24

Rise Time (20-80%)

Tj = -40°C

Tj = 25°C

Tj = 150°C

G_rise

–

150

400

700

C=22nF; RLoad=1Ω

5.1.25

Fall Time (20-80%)

Tj = -40°C

Tj = 25°C

Tj = 150°C

G_fall

–

150

230

500

C=22nF; RLoad=1Ω

5.1.26

Input Propagation Time (Low on)

P(ILN)

190

290

C=22nF; RLoad=1Ω

5.1.27

Input Propagation Time (Low off)

P(ILF)

100

200

C=22nF; RLoad=1Ω

5.1.28

Input Propagation Time (High on)

P(IHN)

190

290

C=22nF; RLoad=1Ω

5.1.29

Input Propagation Time (High off)

P(IHF)

100

200

C=22nF; RLoad=1Ω

5.1.30

Absolute Input Propagation Time

Difference (all channels turn on)

P(an)

–

C=22nF; RLoad=1Ω

5.1.31

Absolute Input Propagation Time

Difference (all channels turn off)

P(af)

–

C=22nF; RLoad=1Ω

5.1.32

Absolute Input Propagation Time

Difference (1channel High off - Low

on)

P(1hfln)

–

150

C=22nF; RLoad=1Ω

5.1.33

Absolute Input Propagation Time

Difference (1channel Low off - High

on)

P(1lfhn)

–

150

C=22nF; RLoad=1Ω

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