©2014 Silicon Storage Technology, Inc.

DS70005029C

07/15

7

2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier

SST12LP15B

Data Sheet

Electrical Specifications

The DC and RF specifications for the power amplifier are specified below.

Table 4 shows the DC and RF characteristics for the configuration that achieves high linearity for 802.11n and

256 QAM applications. The associated schematic is shown in Figure 25 for the16-contact VQFN package.

The RF performance is shown in figures 20 through 24.

Table 5 shows the DC and RF characteristics for the configuration that achieves high power-added efficiency

(PAE). The associated schematic is shown in Figure 18 for the 16-contact VQFN package. The RF perfor-

mance is shown in figures 13 through 17.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute

Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these conditions or conditions greater than those defined in the

operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-

ditions may affect device reliability.)

1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max-

imum rating of average output power could cause permanent damage to the device.

3. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal

Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Table 3: Operating Range

Range

Ambient Temp

Industrial

-40°C to +85°C

3.0V to 4.5V

T3.1 75029