©2014 Silicon Storage Technology, Inc.

DS70005029C

07/15

8

2.4 GHz WLAN 802.11b,g,n, 256 QAM Power Amplifier

SST12LP15B

Data Sheet

3mm x 3mm, 16-contact VQFN High-Linearity, Low EVM Applications

Typical Performance Characteristics for High Linear Output Power for 16-con-

tact VQFN package (Schematic in Figure 11)

Table 4: DC and RF Characteristics for High-Linearity Performance at 25°C, at 3.3V VCC

unless otherwise noted, for 16-contact VQFN (Schematic in Figure 25)

Symbol

Parameter

Min.

Typ

Max. Unit

Supply Voltage at pins 5, 12, 14, and 16

3.0

3.3

4.5

V

Idle current with no RF

135

mA

Reference Voltage

2.80

2.85

2.95

V

Current Consumption at 18 dBm, 256 QAM

180

mA

Current Consumption at 20 dBm, MCS7-HT40

200

mA

Current Consumption at 23 dBm, MCS0-HT20

365

mA

Frequency range

2412

2484

MHz

G

Small signal gain

34

37

dB

Gain variation over band (2412–2484 MHz)

±0.5

dB

Gain ripple over channel (20 MHz)

0.2

dB

2f

Harmonics at 25 dBm, without external filters

-43

dBm/

MHz

3f

-25

4f

-30

5f

-30

EVM

EVM @ 22 dBm Output Power with 802.11g OFDM 54 Mbps signal

3

%

3%

EVM @ 20 dBm Output Power with MCS7-HT40

2.5

%

EVM @ 18 dBm Output Power with MCS9-VHT40

1.8

%

Output Power to meet 802.11g OFDM 6 Mbps spectrum mask

23.5

dBm

Output Power to meet 802.11b DSSS 1 Mbps spectrum mask

24

dBm

Output Power to meet MCS0-HT20 spectrum mask

23

dBm

27

dBm

T4.1 75029