ESDALC6V1W5

3/9

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

0

25

50

75

100

125

150

175

Tj(°C)

Ppp[Tj initial] / Ppp [Tj initial = 25°C]

Fig. 1: Relative variation of peak pulse power

versus initial junction temperature.

10

100

1

10

100

tp(µs)

Tj initial = 25°C

Ppp(W)

Fig. 2: Peak pulse power versus exponential pulse

duration.

0

2

4

6

8

10

12

14

01

23

45

VR(V)

F=1MHz

Vosc=30mV

RMS

Tj=25°C

C(pF)

Fig. 3: Junction capacitance versus reverse voltage

applied (typical values).

0.1

1.0

10.0

100.0

0

1020

3040

5060

Vcl(V)

tp=2.5µs

Tj initial =25°C

Ipp(A)

Fig. 4: Clamping voltage versus peak pulse cur-

rent (maximum values, rectangular waveform).

1

10

100

25

50

75

100

125

Tj(°C)

IR [Tj] / IR [Tj=25°C]

Fig. 5: Relative variation of leakage current versus

junction temperature (typical values).

IC

to be

protected

I/02

I/01

I/04

I/03

Fig. 6: Application example