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ESDALC6V1W5 数据表(PDF) 6 Page - STMicroelectronics |
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ESDALC6V1W5 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 9 page ![]() ESDALC6V1W5 6/9 CROSSTALK BEHAVIOR RL1 RL2 αβ 1G1 12G2 V+ V αβ 2G2 21G1 V+ V Line 1 Line 2 VG1 VG2 DRIVERS RECEIVERS RG1 RG2 Fig. A5: Crosstalk phenomenon The crosstalk phenomena are due to the coupling between 2 lines. Coupling factors ( β12 or β21 ) increase when the gap across lines decreases, particularly in silicon dice. In the example above, the expected signal on load RL2 is α2VG2, in fact the real voltage at this point has got an extra value β21VG2. This part of the VG1 signal represents the effect of the crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to be taken into account when the drivers impose fast digital data or high frequency analog signals. The perturbed line will be more affected if it works with low voltage signal or high load impedance (few k Ω) RF TEST BOARD I/O4 I/O1 To Port2 To Port1 TEST BOARD I/O4 I/O1 To Port2 To Port2 To Port1 To Port1 Fig. A6: Analog crosstalk measurements |
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